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Nanoscience & Nanotechnology-Asia

Volume 1 Issue 2
ISSN: 2210-6820
eISSN: 2210-6812

 

   All Titles

  Conductivity Enhancement by Surface Chemistry in Silicon Nanowires
  pp.177-182 (6) Authors: Rui-Qin Zhang, Kun-Peng Dou, Abir De Sarkar
doi: 10.2174/2210682011101020177
 
 
      Abstract

The silicon nanowires (SiNWs) comprise a core-shell structure. Contrasted to conventional volume doping to modulate the transport properties of SiNWs, recent studies have revealed an economic and non-destructive approach to induce doping through surface engineering. In this review, extensive first principles theoretical investigations are presented which revealed the influence of surface passivation and ambience in modulating the conductivity of SiNWs. The theoretical findings rationalize several experimental results and provide useful pointers for tuning the electrical properties of nanomaterials.

 
  Keywords: Adsorbate, ambience, carrier concentration, conductivity, nanowire core, defect, delocalization, doping, majority, minority, A surface passivation, Nanoscience, Nano- technology
  Affiliation: City University of Hong Kong, Department of Physics and Materials Science, Hong Kong SAR, China.
 
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